| 白钰.有源层厚度对酞菁铜薄膜晶体管电学性能的影响[J].井冈山大学自然版,2012,(1):26-32 |
| 有源层厚度对酞菁铜薄膜晶体管电学性能的影响 |
| RESEARCH ON CUPC TFT＇S ELECTRICS PERFORMANCE EFFECT OF ACTIVE LAYER THICKNESS |
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| DOI： |
| 中文关键词: 酞菁铜 厚度 薄膜晶体管 |
| 英文关键词: CuPc thickness TFT |
| 基金项目: |
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| 中文摘要: |
| 制备了顶接触的薄膜晶体管,实验中采用二氧化硅作为绝缘层,然后再依次真空蒸镀酞菁铜(CuPc)作为晶体管器件的有源层,金作为源漏电极。不同CuPc有机薄膜的厚度分别为15nm、40nm和80nm,制作成三种薄膜晶体管器件。实验证明,当有源层厚度为40nm时,能够获得最大的饱和电流和载流子迁移率。 |
| 英文摘要: |
| Top contact OTFT were prepared by anodic oxidation, SiO2 as the device＇s insulating layer, copper phthalocyanine （CuPc） as the active layer and gold as source and drain electrodes through vacuum evaporating process. Different thickness of TFT are made by 15 nm, 40 nm or 80 nm. The experiment show that the device＇ maximum saturated current. |
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