| 郭鸣,周松华,刘昌鑫.新一代CMOS器件栅介质材料研究进展[J].井冈山大学自然版,2011,(5):76-81 |
| 新一代CMOS器件栅介质材料研究进展 |
| THE STUDYING PROGRESS ON THE NEXT GENERATION GATE DIELECTRIC MATERIALS FOR CMOS DEVICES |
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| DOI： |
| 中文关键词: 高介电常数 栅介质 等效氧化层厚度 漏电流 |
| 英文关键词: High-k gate dielectrics equivalent oxide thickness leakage current |
| 基金项目:江西省教育厅科技项目(GJJ11181、GJJ08417); 井冈山大学博士科研启动基金项目; 华东师范大学优秀博士研究生培养基金(20080051) |
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| 中文摘要: |
| 随着微电子技术的飞速发展,按照摩尔定律发展的要求,SiO2的极限厚度已经成为Si基集成电路提高集成度的瓶颈。寻求代替SiO2的其它新一代高k栅介质已成为当今微电子技术发展的必然趋势。文章介绍了几种最有可能成为下一代栅介质的高k材料,并对其研究进展和存在的问题进行了阐述。 |
| 英文摘要: |
| With the rapid development of microelectronics,the limited thickness of SiO2 has been the node of evaluating the Si-based integrated circuits by Moore's Law.In order to overcome the scaling limitation,a replacement of SiO2 with dielectrics having a higher dielectric constant is unavoidable.Several promising alternatives of gate dielectric material are introduced.The latest development of high-k materials is reviewed,and some problems are also discussed. |
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